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| FDC658AP Single P-Channel Logic Level PowerTrench(R) MOSFET January 2006 FDC658AP Single P-Channel Logic Level PowerTrench(R) MOSFET -30V, -4A, 50m General Description This P-Channel Logic Level MOSFET is produced using Fairchild's advanced PowerTrench process. It has been optimized for battery power management applications. Features Max rDS(on) = 50 m @ VGS = -10 V, ID = -4A Max rDS(on) = 75 m @ VGS = -4.5 V, ID = -3.4A Low Gate Charge High performance trench technology for extremely low rDS(on) RoHS Compliant Applications Battery management Load switch Battery protection DC/DC conversion D D S 1 2 3 6 5 4 PIN 1 D D G SuperSOTTM-6 Absolute Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power dissipation Operating and Storage Junction Temperature Range (Note 1a) (Note 1a) (Note 1b) Ratings -30 25 -4 -20 1.6 0.8 -55 to +150 Units V V A W C Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 30 C/W C/W Package Marking and Ordering Information Device Marking .58A Device FDC658AP Reel Size 7inch Tape Width 8mm Quantity 3000 units (c)2006 Fairchild Semiconductor Corporation FDC658AP Rev. B (W) 1 www.fairchildsemi.com FDC658AP Single P-Channel Logic Level PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage ID = -250A, VGS = 0V ID = -250A, Referenced to 25C VGS = 0V, VDS = -24V VGS = 25V, VDS = 0V -30 -22 -1 100 V mV/C A nA On Characteristics (Note 2) VGS(TH) VGS(TH) TJ rDS(on) ID(ON) gFS Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = -250A ID = -250A, Referenced to 25C ID = -4A, VGS = -10V ID = -3.4A, VGS = -4.5V ID = -4A, VGS = -10V, TJ = 125C VGS = -10V, VDS = -5V ID = -4A, VDS = -5V -20 8.4 -1 -1.8 4 44 67 60 50 75 70 A S m -3 V mV/C Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -15V, VGS = 0V, f = 1MHz 470 126 61 pF pF pF Switching Characteristics (Note 2) td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -15V, ID = -4A, VGS = -5V VDD = -15V, ID = -1A VGS = -10V, RGEN = 6 7 12 16 6 6 2.1 2 14 22 29 12 8.1 ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0V, IS = -1.3 A (Note 2) -0.77 -1.3 -1.2 A V Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78oC/W when mounted on a 1 in2 pad of 2 oz copper b) 156oC/W whe mounted on a minimum pad of 2 oz copper Scale 1: 1 on letter size paper 2: Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% 2 FDC658AP Rev. B (W) www.fairchildsemi.com FDC658AP Single P-Channel Logic Level PowerTrench(R) MOSFET Typical Characteristics 20 2 VGS = -10V -6.0V -5.0V -4.5V -4.0V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.8 VGS = -4.5V 1.6 1.4 1.2 1 0.8 -5.0V -6.0V -7.0V -8.0V -10V -I D , DRAIN CURRENT (A) 15 10 -3.5V 5 -3.0V 0 0 1 2 3 4 5 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0 4 8 12 16 20 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 0.22 1.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID = -4.0A VGS = -10V r DS(on), DRAIN TO SOURCE ON RESISTANCE (OHM) 1.4 ID = -2.0A 0.18 1.2 0.14 TJ = 125oC 0.1 TJ = 25 C 0.06 o 1 0.8 0.6 -50 0.02 -25 0 25 50 75 100 125 150 2 4 6 8 10 TJ, JUNCTION TEMPERATURE (oC) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On-Resistance vs Junction Temperature 15 VDS = -5V -ID, D R A IN C U R R E N T (A ) 12 125 C 9 o Figure 4. On-Resistance vs Gate to Source Voltage 10 TJ = -55 C -I S , REVERSE DRAIN CURRENT (A) o 25 C o VGS = 0V 1 TJ = 125 C 0.1 o 6 0.01 25 C -55 C o o 3 0.001 0 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 FDC658AP Rev. B (W) www.fairchildsemi.com FDC658AP Single P-Channel Logic Level PowerTrench(R) MOSFET Typical Characteristics 10 -V G S , G A T E -S O U R C E V O L T A G E (V ) ID = -4A 8 -15V 6 VDS = -5V -10V C A PA C ITA N C E (pF) 450 600 Ciss f = 1 MHz VGS = 0 V 300 Coss 150 Crss 4 2 0 0 2 4 6 8 10 Qg, GATE CHARGE (nC) 0 0 6 12 18 24 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics 100 Figure 8. Capacitance vs Drain to Source Voltage 10 P(pk), PEAK TRA NSIENT PO W ER (W ) SINGLE PULSE RJA = 156C/W TA = 25C -I D , DR A IN C UR REN T (A ) 10 rDS(on) LIMIT 100us 1ms 8 6 1 VGS = -10V SINGLE PULSE RJA = 156oC/W TA = 25 C 0.01 0.1 o 10ms 100ms 1s DC 1 10 100 4 0.1 2 0 0.01 0.1 1 10 100 -VDS, DRAIN TO SOURCE VOLTAGE (V) t, PULSE WIDTH (s) Figure 9. Forward Bias Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) + RJA RJA = 156 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 o 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t, RECTANGULAR PULSE DURATION Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. 4 FDC658AP Rev. B (W) www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I18 |
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